ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 optimos ? -t2 power-transistor features ? n-channel - enhancement mode ? aec qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25c, v gs =10v 80 a t c =100c, v gs =10v 2) 80 pulsed drain current 2) i d,pulse t c =25c 320 avalanche energy, single pulse 2) e as i d =40a 100 mj avalanche current, single pulse i as - 80 a gate source voltage v gs - 20 v power dissipation p tot t c =25c 71 w operating and storage temperature t j , t stg - -55 ... +175 c iec climatic category; din iec 68-1 - 55/175/56 value v ds 40 v r ds(on),max (smd version) 4.2 m ? i d 80 a product summary pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 type package marking ipb80n04s4-04 pg-to263-3-2 4n0404 ipi80n04s4-04 pg-to262-3-1 4n0404 IPP80N04S4-04 pg-to220-3-1 4n0404 rev. 1.0 page 1 2010-04-06
ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - - 2.1 k/w thermal resistance, junction - ambient, leaded r thja ---62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = 1ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =35a 2.0 3.0 4.0 zero gate voltage drain current i dss v ds =40v, v gs =0v - 0.02 1 a v ds =18v, v gs =0v, t j =85c 2) -120 gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =80a - 4.3 4.6 m ? v gs =10v, i d =80a, smd version - 3.9 4.2 values rev. 1.0 page 2 2010-04-06
ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 2650 3440 pf output capacitance c oss - 650 840 reverse transfer capacitance c rss -2046 turn-on delay time t d(on) -10-ns rise time t r -12- turn-off delay time t d(off) -9- fall time t f -12- gate char g e characteristics 2) gate to source charge q gs -1620nc gate to drain charge q gd -512 gate charge total q g -3343 gate plateau voltage v plateau - 5.8 - v reverse diode diode continous forward current 2) i s - - 80 a diode pulse current 2) i s,pulse - - 320 diode forward voltage v sd v gs =0v, i f =80a, t j =25c - 0.9 1.3 v reverse recovery time 2) t rr v r =20v, i f =50a, d i f /d t =100a/s -39-ns reverse recovery charge 2) q rr -35-nc t c =25c values v gs =0v, v ds =25v, f =1mhz v dd =20v, v gs =10v, i d =80a, r g =3.5 ? v dd =32v, i d =80a, v gs =0 to 10v 2) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 2.1k/w the chip is able to carry 98a at 25c. rev. 1.0 page 3 2010-04-06
ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v; smd 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0; smd z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] single pulse 0.01 0.05 0.1 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 70 80 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 0 50 100 150 200 t c [c] i d [a] rev. 1.0 page 4 2010-04-06
ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c; smd r ds(on) = f( i d ); t j = 25 c; smd parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 80 a; v gs = 10 v; smd parameter: t j 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 5 v 5.5 v 6 v 6.5 v 10 v 0 60 120 180 240 300 01234 v ds [v] i d [a] 5.5 v 6 v 6.5 v 7 v 10 v 1 3 5 7 9 11 13 15 0 20 40 60 80 100 120 140 i d [a] r ds(on) [m ? ] -55 c 25 c 175 c 0 40 80 120 160 200 240 34567 v gs [v] i d [a] 7v rev. 1.0 page 5 2010-04-06
ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 avalanche characteristics if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] 35 a 175 a 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 5 10 2 10 3 10 4 0 5 10 15 20 25 30 v ds [v] c [pf] 10 1 25 c 100 c 150 c 0.1 1 10 100 1 10 100 1000 t av [s] i av [a] 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] rev. 1.0 page 6 2010-04-06
ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 13 avalanche energy 14 drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 80 a pulsed parameter: v dd v gs q gate v gs(th) q g(th) q gs q gd q sw q g 36 38 40 42 44 46 -55 -15 25 65 105 145 t j [c] v br(dss) [v] 8 v 32 v 0 1 2 3 4 5 6 7 8 9 10 0 10203040 q gate [nc] v gs [v] 80 a 40 a 20 a 0 50 100 150 200 250 25 75 125 175 t j [c] e as [mj] rev. 1.0 page 7 2010-04-06
ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2010 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 8 2010-04-06
ipb80n04s4-04 ipi80n04s4-04, IPP80N04S4-04 revision history version revision 1.0 date 06.04.2010 changes final data sheet rev. 1.0 page 9 2010-04-06
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